The C21 MBE system is optimized for the fabrication of III-V superlattices and heterostructures, with an ultimate precision (1-2% error) over deposited thickness and alloy compositions. The most developed know-how associated to this MBE machine, concerns the fabrication of distributed Bragg reflectors based on the AlAs/GaAs system, containing various active structures, such as NIR and mid-IR-emitting quantum wells and quantum dots. Recently, the C21 activity is also focusing on InSb and AlInSb 2D epitaxy on GaAs. 

The chamber allows to grow on 2" wafers with a very good uniformity. It is equiped with:

• Nine effusion cells for Ga, Al, In, Bi, Be, Si
• Three cracker cells for P, As and Sb
• One BandiT and two optical pyrometers for temperature monitoring
• One interfaced reflective high-energy electron diffraction (RHEED) apparatus for real-time growth monitoring and user-friendly fluxes calibration